✦ LIBER ✦

Modeling for an AlGaAs/GaAs heterostructure device using Monte Carlo simulation

✍ Scribed by Tomizawa, M.; Yoshii, A.; Yokoyama, K.

Book ID: 118015274
Publisher: IEEE
Year: 1985
Tongue: English
Weight: 250 KB
Volume: 6
Category: Article
ISSN: 0741-3106
DOI: 10.1109/edl.1985.26145

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Monte Carlo simulation of real‐space ele

Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures

✍ Glisson, T. H.; Hauser, J. R.; Littlejohn, M. A.; Hess, K.; Streetman, B. G.; Sh 📂 Article 📅 1980 🏛 American Institute of Physics 🌐 English ⚖ 628 KB

An event bias technique for Monte Carlo

An event bias technique for Monte Carlo device simulation

✍ H. Kosina; M. Nedjalkov; S. Selberherr 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 117 KB

Physical models of ohmic contact for Mon

Physical models of ohmic contact for Monte Carlo device simulation

✍ Tomás González; Daniel Pardo 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 680 KB

Impact ionization model for full band Mo

Impact ionization model for full band Monte Carlo simulation in GaAs

✍ Jung, H. K.; Taniguchi, K.; Hamaguchi, C. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 454 KB

Simulation of Electron Transport in InGa

Simulation of Electron Transport in InGaAs/AlGaAs HEMTs Using an Electrothermal Monte Carlo Method

✍ Sadi, T.; Kelsall, R.; Pilgrim, N. 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 691 KB

A three-dimensional Monte Carlo model fo

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

✍ T. Sadi; J.-L. Thobel 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 466 KB

## Abstract We present a three‐dimensional (3D) semi‐classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two‐dimensional (2D) models. The advantages of our model, in terms of accu