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An event bias technique for Monte Carlo device simulation

✍ Scribed by H. Kosina; M. Nedjalkov; S. Selberherr


Book ID
108453393
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
117 KB
Volume
62
Category
Article
ISSN
0378-4754

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This paper discusses advanced needs of Monte Carlo simulation approaches for MOS silicon devices scaled below 0.1 Β΅m channel length. For predictive simulation over a wide range of biases, it is necessary to provide the Monte Carlo procedure with tuning capabilities to adjust the mobility through cal