𝔖 Bobbio Scriptorium

✦ LIBER ✦

Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling

✍ Scribed by Wen-Chin Lee; Chenming Hu

Book ID: 114538730
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 208 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.930653

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

"Linear kink effect" induced by electron

"Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS

✍ Mercha, A.; Rafi, J.M.; Simoen, E.; Augendre, E.; Claeys, C. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 624 KB

[IEEE 2000 Symposium on VLSI Technology.

[IEEE 2000 Symposium on VLSI Technology. Digest of Technical Papers - Honolulu, HI, USA (13-15 June 2000)] 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) - Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]

✍ Wen-Chin Lee, ; Chenming Hu, 📂 Article 📅 2000 🏛 IEEE ⚖ 263 KB