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Model of the grain boundary inp-nstructures based on polycrystalline semiconductors

โœ Scribed by L. O. Olimov

Book ID
111493887
Publisher
Allerton Press, Inc.
Year
2010
Tongue
English
Weight
242 KB
Volume
46
Category
Article
ISSN
0003-701X

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๐Ÿ“œ SIMILAR VOLUMES

Influence of grain boundary recombinatio
Influence of grain boundary recombination velocity and grain size on the minority carrier lifetime in polycrystalline semiconductors
โœ C.A. Dimitriadis ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 215 KB

The effective minority carrier lifetime in polycrystalline semiconductors is determined in terms of the grain size and the recombination velocity at the grain boundaries. The effect of the grain boundaries is to reduce the effective lifetime when the grain size is smaller than few diffusion lengths.

The Structure of Grain Boundaries. A Mod
The Structure of Grain Boundaries. A Model Based on Planar Watching
โœ B. Ralph; P. R. Howell; T. F. Page ๐Ÿ“‚ Article ๐Ÿ“… 1973 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 808 KB

## Abstract A model of grain boundary structure is presented which is based on the concept of planar matching across the interface. This approach yields those displacements necessary to define the defect, population, and where possible, localisation of these displacements is seen to generate a vari