๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of deep level impurities on the grain boundary potential of a polycrystalline semiconductor

โœ Scribed by Chattopadhyay, P. ;Haldar, D. P. ;Chakrabarti, S. ;Ray, M.


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
392 KB
Volume
142
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Influence of grain boundary recombinatio
โœ C.A. Dimitriadis ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 215 KB

The effective minority carrier lifetime in polycrystalline semiconductors is determined in terms of the grain size and the recombination velocity at the grain boundaries. The effect of the grain boundaries is to reduce the effective lifetime when the grain size is smaller than few diffusion lengths.