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Effects of a Deep-Level Impurity on Optical Transitions of Quantum-Well Heterostructures

✍ Scribed by Peiji Zhao; H. L. Cui

Publisher
John Wiley and Sons
Year
1997
Tongue
English
Weight
249 KB
Volume
199
Category
Article
ISSN
0370-1972

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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with