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Model of current oscillations in a metal-thin insulator-semiconductor structure

✍ Scribed by I. I. Abramov; A. L. Danilyuk

Book ID
110121101
Publisher
Springer
Year
1998
Tongue
English
Weight
59 KB
Volume
43
Category
Article
ISSN
1063-7842

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In this paper we present results concerning the modeling of oscillations in the I-V g characteristics (V g < 0), of metal/ultra-thin oxide/semiconductor (MOS) structures where the oxide thickness is 45 A. From the theoretical models of the literature we have shown that the modeling of oscillations c