Model of 1f noise in ion-implanted resistors as a function of the resistance, determined by a reverse bias voltage: H. G. E. Beck. Solid-St. Electron.22, 475 (1979)

• Publisher: Elsevier Science
• Year: 1980
• Tongue: English
• Weight: 129 KB
• Volume: 20
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(80)90369-8