1/f noise measurements in ion-implanted silicon resistors as a function of the substrate reverse bias voltage : H.G.E. Beck. Solid-St. Electron.20, 951 (1977)

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 36 KB
• Volume: 17
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(78)91310-0