Model based on trap-assisted tunneling for two-level current fluctuations in submicrometer metal–silicon-dioxide–silicon diodes

✍ Scribed by Andersson, M. O.; Xiao, Z.; Norrman, S.; Engström, O.

• Book ID: 125493844
• Publisher: The American Physical Society
• Year: 1990
• Tongue: English
• Weight: 342 KB
• Volume: 41
• Category: Article
• ISSN: 1098-0121
• DOI: 10.1103/PhysRevB.41.9836