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Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling

✍ Scribed by Lenski, Markus; Endoh, Tetsuo; Masuoka, Fujio


Book ID
118278359
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
378 KB
Volume
88
Category
Article
ISSN
0021-8979

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