MOCVD Layer growth of ZnSe and ZnS / ZnSe multiple layers using nitrogen containing adducts of dimethylzinc
β Scribed by P.J. Wright; B. Cockayne; P.J. Parbrook; A.C. Jones; P. O'Brien; J.R. Walsh
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 1022 KB
- Volume
- 104
- Category
- Article
- ISSN
- 0022-0248
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π SIMILAR VOLUMES
We have grown \(\mathrm{ZnSe} / \mathrm{ZnS}\) superlattices using low pressure MOVPE. The superlattices were grown onto a relaxed \(\mathrm{ZnSe}\) buffer and were constituted of 45 periods. The well and barrier thicknesses were chosen from the calculation of critical thicknesses for coherent and f
MOCVD Layer Growth of ZnO Using Adducts of Dimethyl-and Diethylzinc Reaction mixtures of the tetrahydrofuran adducts of Zn(CH,), and Zn(C,H,), with tertiary butanol are very well suitable for the NIOCVD of c-axis oriented ZnO films. The deposition process is greatly determined by the kind of the gas