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MOCVD Growth of Cubic Gallium Nitride: Effect of V/III Ratio

โœ Scribed by Moret, M. ;Ruffenach-Clur, S. ;Moreaud, N. ;Briot, O. ;Calas, J. ;Aulombard, R. L.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
313 KB
Volume
176
Category
Article
ISSN
0031-8965

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We investigated, by atomic force microscopy (AFM), the effect of the V/III ratio on the surface morphologies of GaN epilayers during the early stage of high-temperature (HT) GaN growth. The epilayers were grown on sapphire substrates by low-pressure metal-organic chemical vapor deposition (LP-MOCVD)