𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MOCVD growth and properties of ZnO films using dimethylzinc and oxygen

✍ Scribed by J.D. Ye; S.L. Gu; F. Qin; S.M. Zhu; S.M. Liu; X. Zhou; W. Liu; L.Q. Hu; R. Zhang; Y. Shi; Y.D. Zheng; Y.D. Ye

Book ID
106019516
Publisher
Springer
Year
2005
Tongue
English
Weight
643 KB
Volume
81
Category
Article
ISSN
1432-0630

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

MOCVD layer growth of ZnO using adducts
MOCVD layer growth of ZnO using adducts of dimethyl- and diethylzinc
✍ Dr. Th. Kaufmann; G. Fuchs; M. Webert; S. Frieske; M. GΓ€ckle πŸ“‚ Article πŸ“… 1989 πŸ› John Wiley and Sons 🌐 English βš– 387 KB

MOCVD Layer Growth of ZnO Using Adducts of Dimethyl-and Diethylzinc Reaction mixtures of the tetrahydrofuran adducts of Zn(CH,), and Zn(C,H,), with tertiary butanol are very well suitable for the NIOCVD of c-axis oriented ZnO films. The deposition process is greatly determined by the kind of the gas

MOCVD Growth of ZnO on Sapphire Using Te
MOCVD Growth of ZnO on Sapphire Using Tert-Butanol
✍ V. Sallet; J.F. Rommeluere; A. Lusson; A. RiviΓ¨re; S. Fusil; O. Gorochov; R. Tri πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 191 KB πŸ‘ 2 views