We review theoretical investigations into the structure and electrical activity of rare-earth dopants in group IV and III-V semiconductors. We find that in Si, rare-earth dopants are electrically active and have a high affinity for complexing with oxygen. In contrast, rare-earth dopants in GaAs and
โฆ LIBER โฆ
Mixed-valent states of rare-earth dopants in IV-VI semiconductors
โ Scribed by V. K. Dugaev
- Book ID
- 110666775
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2000
- Tongue
- English
- Weight
- 220 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0020-1685
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