✦ LIBER ✦

Mixed process IC on SOI wafer for automotive application

✍ Scribed by Noriyuki Iwamori; Shouji Mizuno; Hiroshi Fujimoto; Kazunori Kawamoto

Book ID: 104341985
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 126 KB
Volume: 22
Category: Article
ISSN: 0389-4304
DOI: 10.1016/s0389-4304(01)00091-1

No coin nor oath required. For personal study only.

✦ Synopsis

We have developed 0.8 m SOI BiCDMOS process that includes di!erent types of devices like 35 V Bipolar, 5 V CMOS and 60 V LDMOS. The devices are fabricated on an SOI (Silicon on Insulator) and separated by trench technology to be completely isolated by dielectric oxide. This technology can prevent the formation of any parasitic bipolar transistors which have been the cause of device failures with the conventional junction isolation under the severe environment of automotive application. This technology is one of the most suitable mixed process ICs for vehicles. This report introduces an overview of the process and ICs.

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