Misfit dislocations in highly mismatched oxide interfaces, an X-ray diffraction study

✍ Scribed by Conchon, F. ;Boulle, A. ;Guinebretière, R.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 239 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200675653

✦ Synopsis

Abstract

We present here a detailed study describing the strain relaxation mechanisms occurring in the highly mismatched ZrO~2~/MgO system. Especially, we show using reciprocal space mapping that the ZrO~2~ islands epitaxially grown on the MgO substrate are fully relaxed implying the formation of misfit dislocations at the interface. Furthermore, an analysis of transverse scans performed through symmetrical ZrO~2~ reflections for several azimuthal positions of the sample lets us conclude that dislocations form a square network parallel to ZrO~2~ cell axes. Finally, an accurate analysis of the diffraction data evidences the existence of two subsets of misfit dislocations. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)