An in-situ study of the oxidation of AlN layers fabricated by LPCVD using X-ray diffraction

✍ Scribed by C. Labatut; D. Kharchi; B. Aspar; F. Sibieude; B. Armas

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 839 KB
• Volume: 13
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/0955-2219(94)90009-4

✦ Synopsis

A1N layers were elaborated on SiC substrates using the method of low-pressure chemical vapour deposition ( LPCVD ). The oxMation of these layers was studied in an X-ray diffkaction chamber at temperalures between 900 and 1400~C with an oxygen flow (20 SCCM ) at a pressure of 85 x 103 Pa.

The oxidation was followed as a function of time at several temperatures by observing the intensity of the d(~)'action peaks of the phasesjormed. At IO00°C, the aetion o[ oxygen leads to the formation of an o.xTnitride phase AlO~Ny indicated by the appearance q/ the (400) peak. Between 1000 and 1400°C, the oxidized phase is c¢-Al20 3, shown by the ( 012), ( 024) and ( 116) peaks. The kinetic elements thus obtained are discussed in terms of the morphology of the oxidized suJfaces.