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Minority carrier recombination lifetimes in n-type CdMgSe mixed crystals measured by means of the photothermal infrared radiometry

✍ Scribed by Pawlak, M.; Maliński, M.

Book ID: 121583660
Publisher: SP Versita
Year: 2014
Tongue: English
Weight: 1014 KB
Volume: 22
Category: Article
ISSN: 1230-3402
DOI: 10.2478/s11772-014-0175-1

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✦ Synopsis

Minority recombination lifetimes of n-type CdMgSe mixed crystals were estimated by using infrared photothermal radiometry (PTR) amplitude and phase frequency spectra. The results obtained by the PTR method indicate that the lifetimes of optically generated carriers in CdSe and Cd x Mg 1-x Se crystals are about 0.1 μs. The diffusion length of minority carrier in n-type CdSe single crystal was found to be 4.42 μm and it is in a good agreement with the literature value. It was found that with the increasing thermal-to-plasma component coefficient A the carrier concentration increases as expected from PTR theory.

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