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Influence of the Ar8+ and O6+ ion implantation on the recombination parameters of p and n type implanted Si samples investigated by means of the photothermal infrared radiometry

✍ Scribed by Pawlak, M.; Maliński, M.


Book ID
122299977
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
323 KB
Volume
63
Category
Article
ISSN
1350-4495

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