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Minority carrier lifetime degradation in boron-doped Czochralski silicon

โœ Scribed by Glunz, S. W.; Rein, S.; Lee, J. Y.; Warta, W.


Book ID
127370123
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
542 KB
Volume
90
Category
Article
ISSN
0021-8979

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Effect of nitrogen doping on the minorit
โœ Can Cui; Deren Yang; Xuegong Yu; Xiangyang Ma; Liben Li; Duanlin Que ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 121 KB

The effect of nitrogen doping on the minority carrier lifetime in Czochralski silicon (CZ-Si) passivated in dry O at different temperatures was studied. It was found that the most effective passivation temperature of 2 nitrogen-doped CZ silicon (NCZ-Si) wafers was 1000 8C, the same as that of CZ-Si