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Minority-carrier injection in Pt—Si Schottky-barrier diodes at high current densities

✍ Scribed by Alavi, M.; Reinhard, D.K.; Yu, C.C.W.


Book ID
114595986
Publisher
IEEE
Year
1987
Tongue
English
Weight
776 KB
Volume
34
Category
Article
ISSN
0018-9383

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## Abstract Current–voltage–temperature, capacitance–voltage, and Fourier transform‐deep level transient spectroscopy (FT‐DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n‐silicon carbide (SiC) Schottky diodes. A power law dependence of current on volta