✦ LIBER ✦

Minority carrier injection in Pt-Si/Si Schottky barrier diodes

✍ Scribed by Michael J. Hargrove; R.L. Anderson

Book ID: 118361551
Publisher: Elsevier Science
Year: 1986
Tongue: English
Weight: 390 KB
Volume: 29
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(86)90216-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Minority-carrier injection in Pt—Si Scho

Minority-carrier injection in Pt—Si Schottky-barrier diodes at high current densities

✍ Alavi, M.; Reinhard, D.K.; Yu, C.C.W. 📂 Article 📅 1987 🏛 IEEE 🌐 English ⚖ 776 KB

Minority carrier injection and charge st

Minority carrier injection and charge storage in epitaxial Schottky barrier diodes

✍ D.L. Scharfetter 📂 Article 📅 1965 🏛 Elsevier Science 🌐 English ⚖ 845 KB

Anomalously high minority carrier inject

Anomalously high minority carrier injection in Schottky diodes

✍ Scharfetter, D.L. 📂 Article 📅 1963 🏛 IEEE 🌐 English ⚖ 356 KB

Minority carrier injection in GeAg Scho

Minority carrier injection in GeAg Schottky diodes

✍ J.C. Manifacier; J.P. Fillard 📂 Article 📅 1976 🏛 Elsevier Science 🌐 English ⚖ 182 KB

Calculation of charge distributions and

Calculation of charge distributions and minority-carrier injection ratio for high-barrier schottky diodes

✍ B. Elfsten; P.A. Tove 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 558 KB

Minority carrier injection limited curre

Minority carrier injection limited current in Re/4H-SiC Schottky diodes

✍ Sarpatwari, K. ;Mohney, S. E. ;Ashok, S. ;Awadelkarim, O. O. 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

## Abstract Current–voltage–temperature, capacitance–voltage, and Fourier transform‐deep level transient spectroscopy (FT‐DLTS) measurements have been employed to gain insights into the conduction mechanism in Re/4H n‐silicon carbide (SiC) Schottky diodes. A power law dependence of current on volta