✦ LIBER ✦

Minority-carrier diffusion coefficients and mobilities in silicon

✍ Scribed by A. Neugroschel

Book ID: 126630243
Publisher: IEEE
Year: 1985
Tongue: English
Weight: 306 KB
Volume: 6
Category: Article
ISSN: 0741-3106
DOI: 10.1109/EDL.1985.26178

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Minority-carrier diffusion coefficients

Minority-carrier diffusion coefficients in highly doped silicon

✍ Dziewior, J.; Silber, D. 📂 Article 📅 1979 🏛 American Institute of Physics 🌐 English ⚖ 528 KB

Distribution Coefficients and Carrier Mo

Distribution Coefficients and Carrier Mobilities in InSb

✍ Strauss, Alan J. 📂 Article 📅 1959 🏛 American Institute of Physics 🌐 English ⚖ 642 KB

Photoluminescence and minority carrier d

Photoluminescence and minority carrier diffusion length imaging in silicon and GaAs

✍ Edelman, P; Henley, W; Lagowski, J 📂 Article 📅 1992 🏛 Institute of Physics 🌐 English ⚖ 538 KB

Minority Carrier Diffusion Lengths in Si

Minority Carrier Diffusion Lengths in Silicon Slices and Shallow Junction Devices

✍ T. L. Chu; E. D. Stokes 📂 Article 📅 1978 🏛 Springer US 🌐 English ⚖ 337 KB

Carrier mobilities in microcrystalline s

Carrier mobilities in microcrystalline silicon films

✍ T. Bronger; R. Carius 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Trap controlled minority-carrier mobilit

Trap controlled minority-carrier mobility in heavily doped silicon

✍ A. Neugroschel; F.A. Lindholm; C.T. Sah 📂 Article 📅 1985 🏛 Elsevier Science ⚖ 381 KB

The activation behavior of the minority-carrier mobility and diffusivity in heavily doped (~102° cm -3) Si (Si:As) was investigated in the temperature range, 20 -350 K. Experimental results indicate that hole transitions between the valence band and localized shallow states give rise to the observed