Millimeter-Wave Integrated Circuits

✍ Scribed by Mladen Božanić, Saurabh Sinha

• Publisher: Springer
• Year: 2020
• Tongue: English
• Leaves: 259
• Series: Lecture Notes in Electrical Engineering; 658
• Category: Library

✦ Synopsis

This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditionaldesign methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.

✦ Table of Contents

Preface
Contents
About the Authors
1 Device Scaling: Going from “Micro-” to “Nano-” Electronics
1.1 A Modern Communication System: The Driving Force of Millimeter-Wave Nanoelectronics
1.2 Research into Ever-Faster Device Technologies
1.3 Physics of Miniature (Deep-Submicron) Active Devices
1.3.1 Deep-Submicron Metal-Oxide Semiconductor Field-Effect Transistors
1.3.2 Deep-Submicron High-Electron-Mobility Transistors
1.3.3 Metal-Oxide-Semiconductor High-Electron Mobility Transistors
1.3.4 Deep-Submicron Bipolar Transistors
1.4 Contribution of This Book to the Body of Knowledge
1.5 Content Overview
References
2 Electronic Design Automation for Millimeter-Wave Research and Design
2.1 Semiconductor Industry Implementation Flow
2.2 Commercial and Open-Source Electronic Design Automation Tools
2.2.1 Commercial Tools
2.2.2 Open-Source Approach and Tools
2.3 Schematic Capture
2.4 Component Modeling
2.5 Simulation
2.6 Layout Design and Extraction
2.6.1 Floor Planning, Placement and Routing
2.6.2 Layout Checks
2.6.3 Post-Layout Simulation
2.6.4 Bonding Pads
2.6.5 Extraction for Fabrication
2.6.6 Overview of the Fabrication Process and Steps
2.7 System-Level Simulation and Automation
2.8 Electromagnetic and 3D Simulations
2.9 Role of Technology Computer-Aided Design
2.10 Concluding Remarks
References
3 Millimeter-Wave Substrates and System-Level Approach in Millimeter-Wave Research and Design
3.1 Discrete Substrates
3.1.1 Important Substrate Properties
3.1.2 Classification of Substrates
3.2 System-on-Chip Approach to Packaging
3.2.1 Millimeter-Wave Packages and Bonding
3.2.2 Circuit Reusability in System-on-Chip
3.2.3 On-Chip Sensors
3.2.4 Antennas on Chip
3.3 Multi-Chip Modules and 3D Integrated Circuits
3.3.1 Multi-Chip Packaging Options
3.3.2 Advantages and Challenges of the Multi-Chip Packaging Approach
3.3.3 3D Packaging
3.3.4 Interconnects
3.4 System-on-Package
3.4.1 Advantages and Challenges of the System-on-Package Approach
3.4.2 Popular System-on-Package Technologies
3.4.3 Interconnects and Transitions
3.4.4 Antennas on Package
3.4.5 System-on-Package Topology Decision
3.5 Economics of Packaging
3.6 Testing of System-on-Chip, Multi-Chip Modules and System-on-Package
3.7 Steps in Making a Package Choice and Successful Packaging Execution
3.8 Concluding Remarks
References
4 Methodologies for Millimeter-Wave Circuit Design
4.1 Low-Frequency and DC Design
4.1.1 Biasing
4.1.2 Low-Frequency Amplifier Design
4.2 Millimeter-Wave Power Amplifiers
4.2.1 Main Characteristics of Power Amplifiers
4.2.2 Classification of Power Amplifiers
4.2.3 Millimeter-Wave Switch-Mode Power Amplifiers
4.3 Millimeter-Wave Low-Noise Amplifiers
4.3.1 Main Characteristics of Low-Noise Amplifiers
4.3.2 Narrowband Low-Noise Amplifiers
4.3.3 Broadband Low-Noise Amplifiers
4.4 Impedance Matching
4.5 Millimeter-Wave Oscillators
4.5.1 Local Oscillators
4.5.2 Voltage-Controlled Oscillators
4.6 Mixers
4.7 Filters
4.7.1 Passive Band-Pass Filters
4.7.2 Active Band-Pass Filters
4.8 Concluding Remarks
References
5 Methodologies for Millimeter-Wave Circuit Design in Extreme Environments
5.1 Types of Extreme Environments and Their Practical Examples
5.2 Extreme Temperature Electronics
5.2.1 Temperature Effects on Semiconductors
5.2.2 Operating in Moderately and Very Hot Environments
5.2.3 Operating in Cold Environments
5.2.4 Temperature Effects on Passives
5.3 Radiation Effects on Electronics
5.3.1 Sources of Radiation
5.3.2 Types of Radiation Effects on Electronic Components
5.3.3 Radiation Effects on Semiconductors
5.3.4 Radiation Hardening of Electronic Circuits
5.4 SiGe Technology—Towards an Omni-Suitable Technology
5.5 Humidity and Moisture: Corrosive Environments
5.6 Electronic Circuits Operating in Extreme Vibration Environments
5.7 Packaging for Extreme Environments
5.8 Simulation for Extreme Environment Circuit Operation
5.9 Concluding Remarks
References
6 Further Device Scaling: From Nanoelectronics to Future Technologies
6.1 FinFETs
6.2 Cooling of Nanoelectronic Circuits for Better Frequency Performance
6.3 Superconductivity
6.4 Quantum Computing
6.5 Alternatives to Traditional Semiconductor Technologies
6.5.1 Graphene-Based Electronics
6.5.2 Diamond-Based Electronics
6.5.3 Carbon Nanotubes
6.5.4 Optoelectronics
6.5.5 Spintronics
6.6 Concluding Remarks
References
7 Getting Ready for Terahertz Electronics
7.1 Terahertz Communication Electronics
7.2 Terahertz Radar Sensing
7.3 Terahertz Imaging (Spectrometry and Radar)
7.4 Traditional Terahertz Electronics Implementations and Passive Sensing
7.4.1 Electronic Systems Based on Schottky Diodes
7.4.2 Optical Terahertz Emitters
7.4.3 Passive Solid-State Detection
7.5 Solid-State Devices Capable of Amplifying at Terahertz Frequencies
7.5.1 SiGe BiCMOS Technology
7.5.2 InP Technologies
7.5.3 GaAs and GaN Technologies
7.5.4 CMOS Technology
7.6 Challenges in Wide Adoption of Terahertz Electronics
7.7 Chapter Concluding Remarks
7.8 Book Concluding Remarks
References