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Microwave p-i-n diodes and switches based on 4H-SiC

✍ Scribed by Camara, N.; Zekentes, K.; Romanov, L.P.; Kirillov, A.V.; Boltovets, M.S.; Vassilevski, K.V.; Haddad, G.

Book ID: 118230667
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 143 KB
Volume: 27
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2005.862686

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t