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High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC

✍ Scribed by A. Pérez-Tomás; M.R. Jennings; M. Davis; V. Shah; T. Grasby; J.A. Covington; P.A. Mawby


Book ID
103833532
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
620 KB
Volume
38
Category
Article
ISSN
0026-2692

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Electrical and low frequency noise prope
✍ Arpatzanis, N. ;Tsormpatzoglou, A. ;Dimitriadis, C. A. ;Zekentes, K. ;Camara, N. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 471 KB

## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t