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Microwave monolithic analogue frequency divider with GaAs HEMT

✍ Scribed by E. Bourdel; B. Delacressonniere; J. L. Gautier; C. Josse; P. Pouvil


Book ID
112145919
Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
847 KB
Volume
5
Category
Article
ISSN
0895-2477

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Injection-locked GaInp/GaAs HBT frequenc
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## Abstract The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection‐locked frequency divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback an