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Injection-locked GaInp/GaAs HBT frequency divider with stacked transformers

✍ Scribed by Hung-Ju Wei; Chinchun Meng; YuWen Chang; Guo-Wei Huang

Book ID: 102518796
Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 420 KB
Volume: 49
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.22737

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✦ Synopsis

Abstract

The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection‐locked frequency divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mW, the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 × 1.0 mm^2^. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2602–2605, 2007; Published online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.22737

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