✦ LIBER ✦

Microwave ion source for ion implantation

✍ Scribed by N. Sakudo

Book ID: 113278736
Publisher: Elsevier Science
Year: 1987
Tongue: English
Weight: 666 KB
Volume: 21
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(87)90819-6

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

New microwave ion source for high energy

New microwave ion source for high energy ion implanter

✍ K. Amemiya; K. Tokiguchi; H. Koike; T. Seki; N. Sakudo 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 289 KB

Emittances of a microwave ion source for

Emittances of a microwave ion source for implantation

✍ N. Sakudo; H. Koike; K. Tokiguchi; T. Seki; K. Sakai 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 419 KB

Comparative Study of an RF and a Microwa

Comparative Study of an RF and a Microwave High-Density-Plasma Source for Plasma Immersion Ion Implantation

✍ S. N. Averkin; A. P. Ershov; A. A. Orlikovsky; K. V. Rudenko; Ya. N. Sukhanov 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 96 KB

Non-mass analysed ion implantation using

Non-mass analysed ion implantation using microwave ion source

✍ K Tokiguchi; H Itoh; N Sakudo; H Koike; T Saitoh 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 354 KB

Microwave ion source

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 159 KB

Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible. A simple tight-binding model is describ

Negative-ion sources for ion implantatio

Negative-ion sources for ion implantation

✍ A.J.T. Holmes; G. Proudfoot 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 503 KB