𝔖 Bobbio Scriptorium
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Microwave etching device for reactive ion etching

✍ Scribed by H. Schmid


Book ID
108025631
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
753 KB
Volume
139
Category
Article
ISSN
0921-5093

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## Abstract Deep reactive ion etching at cryogenic temperatures has been used for a macropore formation in silicon. A double‐mask set‐up was applied. The first mask of a patterned thin aluminum or silicon oxide layer determined the pore size and density, and thicker patterns of silicon, glass, or S