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Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy

โœ Scribed by X. J. Wang; Y. B. Hou; Y. Chang; C. R. Becker; R. F. Klie; S. Sivananthan

Publisher
Springer US
Year
2009
Tongue
English
Weight
699 KB
Volume
38
Category
Article
ISSN
0361-5235

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โœ N.A. Papanicolaou; G.W. Anderson; J.A. Modolo; A. Georgakilas ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 562 KB

Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th