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Microstructure of diamond films near the interface with WC substrate

✍ Scribed by S. Takatsu; K. Saijo; M. Yagi; K. Shibuki; J. Echigoya

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
820 KB
Volume
140
Category
Article
ISSN
0921-5093

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We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi