Thin silicon nitride films were prepared at 350 Β°C by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process
Microstructure and properties of particle reinforced silicon carbide and silicon nitride ceramic matrix composites prepared by chemical vapor infiltration
β Scribed by Yongsheng Liu; Laifei Cheng; Litong Zhang; Yunfeng Hua; Wenbin Yang
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 920 KB
- Volume
- 475
- Category
- Article
- ISSN
- 0921-5093
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β¦ Synopsis
Introduction: Particle reinforced silicon carbide and silicon nitride ceramic matrix composites were fabricated using designed particle agglomeration and chemical vapor infiltration (CVI) technique. Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) were employed to observe the microstructures of the preforms and as-infiltrated composites. In the preform, the inter-agglomeration and intra-agglomeration pores had an approximate size of 500-800 m and 5-10 m, respectively. After infiltrated, a large amount of silicon carbide and silicon nitride matrix were infiltrated in the preform, the sizes of inter-agglomeration and intra-agglomeration pores were 200-400 m and 2-4 m, respectively. The SiC and Si 3 N 4 whiskers were observed in the residual intra-agglomeration pores. The flexural strength of SiC (p) /SiC composites changed with first-step pressure and second-step pressure. The maximum of the strength was 284 MPa, and the ratio of the retained strength was 95.4% at 1600 β’ C. The fracture toughness of SiC (p) /SiC composites was around 7 Mpa m 1/2 . The Si 3 N 4(p) /Si 3 N 4 composite attained an acceptable strength, 113.4 MPa and low dielectric constant, about 4.2-4.3.
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