## Abstract InGaN/GaN‐based light emitting diodes (LEDs) can be grown by using metal organic chemical vapor deposition (MOCVD) to make eight, 3‐inch diameter wafers with a thin, tapered reactor cell at atmospheric pressure. The reactor configuration was optimized for the purpose of improving the Ga
Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD
✍ Scribed by Öztürk, M. K.; Çörekçi, S.; Tamer, M.; Çetin, S. Ş.; Özçelik, S.; Özbay, E.
- Book ID
- 121537194
- Publisher
- Springer
- Year
- 2013
- Tongue
- English
- Weight
- 558 KB
- Volume
- 114
- Category
- Article
- ISSN
- 1432-0630
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