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Microscopic Reflection Difference Spectroscopy on Semiconductor Nanostructures

✍ Scribed by Koopmans, B. ;Koopmans, B. ;Santos, P.V. ;Santos, P.V. ;Cardona, M.

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 290 KB
Volume: 170
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199812)170:2<307::aid-pssa307>3.0.co;2-z

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✦ Synopsis

Several aspects of extending reflection difference spectroscopy (RDS) to sub-micrometer-, and possibly even nanometer-, resolution are discussed. Details of our recently developed mRDS technique, and an analysis of artifacts in non-ideal systems, are presented. We performed macroscopic and microscopic RDS experiments on GaAs/AlGaAs quantum wells in several configurations, including the in-plane anisotropy for asymmetric quantum wells, and the confinement-induced anisotropy for in-plane wave propagation. The experimental results are interpreted in terms of empirical tight-binding calculations and phenomenological models.

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