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Microscopic properties of silicon dihydride bonding in a-Si:H

✍ Scribed by David C. Bobela; T. Su; P.C. Taylor; G. Ganguly

Book ID: 116669218
Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 110 KB
Volume: 352
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2006.01.062

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## Abstract We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B **47**(12), 7013–7024 (1993)] we find that the