An accurate model is presented for micromachined on-chip spiral inductors, in which the high-frequency current crowding effects in metal traces are considered by simplified partial element equivalent circuits, and the substrate parasitics are extracted by the parametric modeling method. The model ha
Micromachined microwave planar spiral inductors and transformers
β Scribed by Ribas, R.P.; Lescot, J.; Leclercq, J.-L.; Karam, J.M.; Ndagijimana, F.
- Book ID
- 114553813
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 889 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0018-9480
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π SIMILAR VOLUMES
A new method to efficiently calculate the self and mutual inductances of a planar spiral inductor or a multicoil transformer is presented. Three analytical formulas are firstly derived to calculate partial inductances of concentric half-turn segments, which are then summed to the device's total indu
## Abstract Inductance increase up to 28% was obtained for onβchip spiral inductors by employing DCβsputtered CoFe and NiFe ferromagnetic (FM) layer on top of the spirals. It was also observed that slitβpatterned FM layers exhibited better quality factors than blanket FM layers, leading to values c
## Abstract A 4.5βturn spiral inductor with tapered Cu metal width (__ΞW__ = 3 ΞΌm) fabricated on normal silicon substrate (βΌ750 ΞΌm) exhibited a high quality factor of 9.68 at 2.0 GHz, which is 18.8% higher than that (8.15) of a 4.5βturn spiral inductor with comparable outer dimension and equal Cu m