Mg-doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

✍ Scribed by Yu, Hongbo ;Strupinski, Wlodek ;Butun, Serkan ;Ozbay, Ekmel

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 167 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521461

✦ Synopsis

Abstract

The growth of high‐performance Mg‐doped p‐type Al~x~ Ga~1–x~ N (x = 0.35) layers using low‐pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p‐type conductivity of the Al~x~ Ga~1–x~ N (x = 0.35) alloy was investigated. It was found that the p‐type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p‐type resistivity of 3.5 Ω cm for Al~x~ Ga~1–x~ N (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10^–2^ Ω cm^2^ was measured. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)