A molecular dynamics simulation of clust
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Yasuhiro Hada
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Article
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2003
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Elsevier Science
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English
β 224 KB
Cluster ion implantation is a useful technique for manufacturing ultra-shallow-junction. In order to investigate the depth and lateral distribution as well as cluster dissociation, we performed a molecular dynamics simulation that injects 200-500 eV/atom boron cluster into single crystal silicon. Th