✦ LIBER ✦

Metal/TaN (≈5 nm)/Si diode fabricated by DC magnetron sputtering

✍ Scribed by Q. X. Jia; K. Ebihara; T. Ikegami; W. A. Anderson

Publisher: Springer
Year: 1994
Tongue: English
Weight: 446 KB
Volume: 58
Category: Article
ISSN: 1432-0630
DOI: 10.1007/bf00332442

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Ta/Si Schottky diodes fabricated by magn

Ta/Si Schottky diodes fabricated by magnetron sputtering technique

✍ Y.S. Ocak; M.F. Genisel; T. Kılıçoğlu 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 291 KB

Electrical properties of Ta/n-Si and Ta/p-Si Schottky barrier diodes obtained by sputtering of tantalum (Ta) metal on semiconductors have been investigated. The characteristic parameters of these contacts like barrier height, ideality factor and series resistance have been calculated using current v

Optical properties of metal and semicond

Optical properties of metal and semiconductor SmS thin films fabricated by rf/dc dual magnetron sputtering

✍ S. Tanemura; L. Miao; S. Koide; Y. Mori; P. Jin; A. Terai; N. Nabatova-Gabain 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 154 KB