✦ LIBER ✦

Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

✍ Scribed by Shizuo Fujita; Shigeo Fujita

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 411 KB
Volume: 145
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)91106-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

p-n junction diodes prepared in vapor-ph

p-n junction diodes prepared in vapor-phase epitaxial ZnSe films using metallic Zn and Se

✍ Tetsuo Muronoi 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 234 KB

p-type doping by ion implantation into Z

p-type doping by ion implantation into ZnSe epitaxial layers grown by metalorganic vapor phase epitaxy

✍ Tokuo Yodo; Kazuhiro Ueda; Ken Yamashita 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 358 KB

Lateral p-n junctions containing p-type

Lateral p-n junctions containing p-type (311)A facets in nonplanar metalorganic vapor phase epitaxy of AlGaAs lasers

✍ T.Y. Wang 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 567 KB

Low-pressure metalorganic vapor phase ep

Low-pressure metalorganic vapor phase epitaxy of ZnSe-based light emitting diodes

✍ H. Stanzl; K. Wolf; B. Hahn; W. Gebhardt 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 410 KB

Growth of p-type ZnSe by metalorganic va

Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen source

✍ K. Inoue; K. Yanashima; T. Takahashi; J.S. Hwang; K. Hara; H. Munekata; H. Kukim 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 254 KB

High Quality p+-n+-GaAs Tunnel Junction

High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

✍ Beji, L. ;el Jani, B. ;Gibart, P. 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 115 KB

We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a