High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

✍ Scribed by Beji, L. ;el Jani, B. ;Gibart, P.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 115 KB
• Volume: 183
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200102)183:2<273::aid-pssa273>3.0.co;2-r

✦ Synopsis

We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a tunnel junction with peak current density up to 50 Acm --2 , and peak-to-valley current ratio up to 20 at room temperature. This represents the best result ever reported for a GaAs tunnel diode by MOVPE. The calculated theoretical peak current density agrees substantially with our experimental and reported results.