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Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications

✍ Scribed by Omnès, F.; Marenco, N.; Beaumont, B.; de Mierry, Ph.; Monroy, E.; Calle, F.; Muñoz, E.


Book ID
121263186
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
393 KB
Volume
86
Category
Article
ISSN
0021-8979

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AlInN HEMT grown on SiC by metalorganic
✍ Guo, Shiping ;Gao, Xiang ;Gorka, Daniel ;Chung, Jinwoork W. ;Wang, Han ;Palacios 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 568 KB

## Abstract In this work we present the epitaxial and device results of AlInN/GaN HEMTs grown on SiC by metalorganic vapor phase epitaxy. High quality AlInN/GaN HEMT structures with sub‐10 nm AlInN barrier were grown with very low Ga background level (<1%). The low __R__~sh~ of 215 Ω/sq was obtaine