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Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

✍ Scribed by Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

Book ID: 121695111
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 586 KB
Volume: 89
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1372160

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