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Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

✍ Scribed by X. B. Zhang; J. H. Ryou; R. D. Dupuis; G. Walter; N. Holonyak

Book ID
107453635
Publisher
Springer US
Year
2006
Tongue
English
Weight
174 KB
Volume
35
Category
Article
ISSN
0361-5235

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The growth of very thin, abrupt-interface, uniform epitaxial heterostructures of AlGaAs-GaAs and GaAsP-GaAs by metalorganic chemical vapor deposition (MOCVD) is described. A brief description of the growth process as it applies to thin layers erown uniformly over large area is given. High resolution