A common metallization scheme for ohmic
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Krishnamachar Prasad
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Article
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1994
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Elsevier Science
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English
β 250 KB
Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence