Metallic resistively coupled single-electron transistor
โ Scribed by Pashkin, Yu. A.; Nakamura, Y.; Tsai, J. S.
- Book ID
- 120037176
- Publisher
- American Institute of Physics
- Year
- 1999
- Tongue
- English
- Weight
- 461 KB
- Volume
- 74
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.122973
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๐ SIMILAR VOLUMES
A resistively coupled single-electron transistor (R-SET) was fabricated using a modulationdoped heterostructure and metal Schottky gates, and measured at low temperature. Currents of R-SET with tunnel gate resistor were calculated using the orthodox theory. It is shown that the R-SET with tunnel gat
The system of one and two qubits coupled electrostatically with the quantum dot placed between the two electron reservoirs (single electron transistor, SET) has been studied. The qubit charge oscillations and the current flowing through the SET were calculated using the equation of motion method for