The effect of hydrogen on p-type Si/Mn and Si/Co Schottky diode has been investigated in present studies. The variations of I-V characteristics suggested that the rectifying act of these diodes change with variation of hydrogen pressure, which is due to the diffusion of hydrogen through the Mn and C
✦ LIBER ✦
Metallic polythiophene/inorganic semiconductor Schottky diodes
✍ Scribed by Abdulmecit Turut; Fatih Köleli
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 427 KB
- Volume
- 192
- Category
- Article
- ISSN
- 0921-4526
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