Schottky diode based on composite organic semiconductors

✍ Scribed by R.K Gupta; R.A Singh

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 200 KB
• Volume: 7
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2004.05.002

✦ Synopsis

A Schottky diode with configuration Pt/ PAn-PVC/In is fabricated using composite of polyaniline with polyvinyl chloride (PAn-PVC). Current-voltage (I2V ) plots were non-linear and capacitance-voltage (C2V ) plots were almost linear in reverse bias indicating rectification behavior. The observed current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Various junction parameters were calculated from the temperaturedependent I2V and C2V data and discussed. The carrier concentration from 1=C 2 2V plots varies from 2.70 Â 10 16 cm À3 at room temperature to 4.62 Â 10 16 cm À3 at 343 K. Impedance studies shows the R(RC)(RC) equivalent circuit for the fabricated Schottky diode.